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Applied Surface Science

Volumn 301, Issue , 2014, Pages 436-441

Mixed Ti-O-Si oxide films formation by oxidation of titanium-silicon interfaces

(2) Benito, N a Palacio, C a

a UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

Author keywords

Angle resolved X ray photoelectron spectroscopy; Growth; Oxidation; Ti Si interfaces; X ray photoelectron spectroscopy

Indexed keywords

GROWTH (MATERIALS); INTERFACES (MATERIALS); OXIDATION; OXIDE FILMS; PHOTOELECTRONS; PHOTONS; SUBSTRATES; TITANIUM DIOXIDE; TITANIUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY; LOW OXYGEN PRESSURE; METALLIC TITANIUM; MULTILAYER STRUCTURES; NEAR SURFACES; SI SUBSTRATES; SILICON INTERFACE; TI/SI INTERFACE;

SILICON COMPOUNDS;

EID: 84897915810 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2014.02.094 Document Type: Conference Paper

Times cited : (30)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.