Damp and dry heat degradation of thermal oxide passivation of p + silicon

Journal of Applied Physics

Volumn 115, Issue 11, 2014, Pages

  Thomson, Andrew ^a   Gardner, Matthew ^a   McIntosh, Keith ^b   Shalav, Avi ^a   Bullock, James ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b PV Lighthouse   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED AGEING TESTS; AMBIENT CONDITIONS; AMBIENT DEGRADATION; DAMP-HEAT EXPOSURE; HEAVILY DOPED SILICONS; HIGH-EFFICIENCY SOLAR CELLS; INTERFACE DEFECTS; STORAGE CONDITION;

DOPING (ADDITIVES); MOISTURE; PHOTOVOLTAIC CELLS; SILICON; SILICON OXIDES; SOLAR CELLS; SURFACE REACTIONS; TESTING;

INTERFACE STATES;

EID: 84897863682     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4869057     Document Type: Article

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