Efficient monte carlo simulation of tunnel currents in MOS structures

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 179-182

  Grgec, D ^a   Vexler, M I ^a   Jungemann, C ^a   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARISONS WITH MEASUREMENTS; DEVICE SIMULATORS; MONTE CARLO DEVICE SIMULATIONS; MOS STRUCTURE; MOSFETS; QUANTUM CORRECTION; TUNNEL CURRENTS; TUNNELING PROBABILITIES;

MONTE CARLO METHODS;

EID: 84896863538     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194899     Document Type: Conference Paper

References (10)

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8. M. Vexler, N. Asli, A. Shulekin, B. Meinerzhagen, and P. Seegebrecht, "Compact quantum model for a silicon MOS tunnel diode," Microelectron. Eng., vol. 59, pp. 161- 166, 2001.
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