Dissociative adsorption of water on an H2O/GaAs(100) interface: In situ near-ambient pressure XPS studies

Journal of Physical Chemistry C

Volumn 118, Issue 8, 2014, Pages 4259-4266

  Zhang, Xueqiang ^a,b   Ptasinska, Sylwia ^a,b  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOCIATIVE ADSORPTION; DISSOCIATIVE WATER ADSORPTION; ELEVATED PRESSURE; PEAK BROADENING; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; TEMPERATURE INCREASE; WATER DISSOCIATION;

ADSORPTION; DISSOCIATION; GALLIUM ARSENIDE; HYDROGEN BONDS; MOLECULES; PHOTOELECTRONS; SEMICONDUCTING GALLIUM; WATER VAPOR;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84896816034     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp411977p     Document Type: Article

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