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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1785-1789

Temperature-programmed desorption and high-resolution electron energy loss spectroscopy studies of the interaction of water with the GaAs (001)-(4 × 2) surface

(3) Chung, Chan Hwa a Yi, Sang I a Henry Weinberg, W a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION OF WATER; DECOMPOSITION PRODUCTS; DESORBING WATER; DISSOCIATION PROBABILITY; DISSOCIATION TEMPERATURE; GAAS; GAAS SURFACES; GAAS(001); HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; K POINTS; MOLECULAR ADSORPTION; OXIDE GROWTH; SURFACE HYDROXYL; THERMAL DESORPTION SPECTRA;

ADSORPTION; AUGER ELECTRON SPECTROSCOPY; DEWATERING; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION; GALLIUM ALLOYS; GALLIUM ARSENIDE; NUCLEAR INSTRUMENTATION; SEMICONDUCTING GALLIUM; SURFACE CHEMISTRY; TEMPERATURE PROGRAMMED DESORPTION; THERMAL DESORPTION; WATER RECYCLING; WATER TREATMENT;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 0009009815 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.581107 Document Type: Article

Times cited : (13)

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