Gate-induced electron-state tuning of MoS2: First-principles calculations

Journal of Physics Condensed Matter

Volumn 26, Issue 13, 2014, Pages

  Cuong, Nguyen Thanh ^a,b   Otani, Minoru ^a,b   Okada, Susumu ^b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

density functional theory; electrostatic doping; nearly free electron state

Indexed keywords

DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ELECTRONS; MOLYBDENUM COMPOUNDS; THIN FILMS;

CHARGE ACCUMULATION; CONDUCTING PROPERTIES; ELECTROSTATIC DOPING; FIRST-PRINCIPLES CALCULATION; FREE ELECTRON; LOCAL ELECTRIC FIELD; TOTAL-ENERGY CALCULATIONS;

CALCULATIONS;

EID: 84896509408     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/26/13/135001     Document Type: Article

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