Gate-controlled carrier injection into hexagonal boron nitride

Physical Review B - Condensed Matter and Materials Physics

Volumn 83, Issue 7, 2011, Pages

  Otani, Minoru ^a,c   Okada, Susumu ^b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79961064858     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.073405     Document Type: Article

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24. The gate electric field of 0.41 V/Å is an arbitrary choice chosen to be beyond the threshold electric field of 0.27 V/Å for the metallic transition in h -BN with eight atomic layers.