Electronic structure of a quasi-freestanding MoS2 monolayer

Nano Letters

Volumn 14, Issue 3, 2014, Pages 1312-1316

  Eknapakul, T ^a   King, P D C ^b,c,d   Asakawa, M ^e   Buaphet, P ^a   He, R H ^f,g   Mo, S K ^f   Takagi, H ^h,i   Shen, K M ^c,d   Baumberger, F ^b,j,k   Sasagawa, T ^e   Jungthawan, S ^a   Meevasana, W ^a  

^a SURANAREE UNIVERSITY OF TECHNOLOGY   (Thailand)

^b UNIVERSITY OF ST ANDREWS   (United Kingdom)

^c Cornell University   (United States)

^d Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

^e TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^f LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^g BOSTON COLLEGE   (United States)

^h UNIVERSITY OF TOKYO   (Japan)

ⁱ RIKEN   (Japan)

^j UNIVERSITY OF GENEVA   (Switzerland)

^k PAUL SCHERRER INSTITUTE   (Switzerland)

more..

Author keywords

angle resolved photoemission; electronic structure; layered semiconductor; transition metal dichalcogenides (TMD); van der Waals expansion

Indexed keywords

CONDUCTION BANDS; ELECTRONIC STRUCTURE; ENERGY GAP; MOLYBDENUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSITION METALS; VAN DER WAALS FORCES;

ANGLE-RESOLVED PHOTOEMISSION; LAYERED SEMICONDUCTORS; MOLYBDENUM DISULFIDE; TRANSITION METAL DICHALCOGENIDES (TMD); VAN DER WAALS;

MONOLAYERS;

EID: 84896345049     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4042824     Document Type: Article

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