Strain-tunable electronic and transport properties of MoS2 nanotubes

Nano Research

Volumn 7, Issue 4, 2014, Pages 1-10

  Li, Weifeng ^a   Zhang, Gang ^a   Guo, Meng ^b   Zhang, Yong Wei ^a  

^a INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

^b QILU UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

carrier mobility; density functional theory; semiconductor to metal transition; strain engineering

Indexed keywords

EID: 84894627300     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-014-0418-y     Document Type: Article

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