AlN nanotube as a potential electronic sensor for nitrogen dioxide

Microelectronics Journal

Volumn 43, Issue 7, 2012, Pages 452-455

  Beheshtian, Javad ^a   Baei, Mohammad T ^b   Bagheri, Zargham ^c   Peyghan, Ali Ahmadi ^c  

^a SHAHID RAJAEE TEACHER TRAINING UNIVERSITY   (Iran)

^b ISLAMIC AZAD UNIVERSITY   (Iran)

^c ISLAMIC AZAD UNIVERSITY   (Iran)

Author keywords

Ab initio; Adsorption; Aluminum nitride nanotubes; Density of state; DFT

Indexed keywords

AB INITIO; ADSORPTION ENERGIES; ALN; DENSITY OF STATE; DFT; ELECTRON TRANSPORT; ELECTRONIC SENSORS; EQUILIBRIUM GEOMETRIES; EXTERIOR SURFACES; GAS SENSOR DEVICES; HIGH SENSITIVITY; HOMO-LUMO ENERGY GAP; NITROGEN DIOXIDES; SHORT RECOVERY TIME; SINGLE-WALLED;

ADSORPTION; ALUMINUM NITRIDE; CALCULATIONS; CHEMICAL SENSORS; CHEMISORPTION; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; MOLECULES; NANOTUBES;

NITROGEN OXIDES;

EID: 84861339028     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2012.04.002     Document Type: Article

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