Experimental observation and physics of 'negative' capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/ GaN MOS-HEMT on SiC substrate

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2013, Pages

  Then, H W ^a   Dasgupta, S ^a   Radosavljevic, M ^a   Chow, L ^a   Chu Kung, B ^a   Dewey, G ^a   Gardner, S ^a   Gao, X ^b   Kavalieros, J ^a   Mukherjee, N ^a   Metz, M ^a   Oliver, M ^b   Pillarisetty, R ^a   Rao, V ^a   Sung, S H ^a   Yang, G ^a   Chau, R ^a  

^a INTEL CORPORATION   (United States)

^b IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894361572     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2013.6724709     Document Type: Conference Paper

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