The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

Journal of Alloys and Compounds

Volumn 596, Issue , 2014, Pages 92-97

  Fu, Nannan ^a   Li, Enling ^a   Cui, Zhen ^a   Ma, Deming ^a   Wang, Wei ^a   Zhang, Yulong ^a   Song, Sha ^a   Lin, Jie ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Electronic properties; First principles; P doped GaN nanowires

Indexed keywords

EID: 84894127172     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2014.01.186     Document Type: Article

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