A 0.38-V operating STT-MRAM with process variation tolerant sense amplifier

Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013

Volumn , Issue , 2013, Pages 249-252

  Umeki, Yohei ^a   Yanagida, Koji ^a   Yoshimoto, Shusuke ^a   Izumi, Shintaro ^a   Yoshimoto, Masahiko ^a   Kawaguchi, Hiroshi ^a   Tsunoda, Koji ^b   Sugii, Toshihiro ^b  

^a KOBE UNIVERSITY   (Japan)

^b Low power Electronics Association and Project LEAP   (Japan)

Author keywords

Low voltage; Process variation tolerant; STT MRAM

Indexed keywords

LOW VOLTAGES; MAGNETORESISTANCE RANDOM ACCESS MEMORY; MEMORY BANDWIDTHS; OPERATING POWER; PROCESS VARIATION; SENSE AMPLIFIER; SPIN TRANSFER TORQUE; STT-MRAM;

RANDOM ACCESS STORAGE;

EID: 84893620280     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASSCC.2013.6691029     Document Type: Conference Paper

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