Top-pinned perpendicular MTJ structure with a counter bias magnetic field layer for suppressing a stray-field in highly scalable STT-MRAM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2013, Pages

  Iba, Y ^a   Yoshida, C ^a   Hatada, A ^a   Nakabayashi, M ^a   Takahashi, A ^a   Yamazaki, Y ^a   Noshiro, H ^a   Tsunoda, K ^a   Takenaga, T ^a   Aoki, M ^a   Sugii, T ^a  

^a Low power Electronics Association and Project LEAP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS MAGNETIC FIELD; EXTERNAL MAGNETIC FIELD; FREE LAYERS; LARGE DESIGNS; MAGNETIC STABILITY; PERPENDICULAR MTJ; PINNED LAYERS; SWITCHING PERFORMANCE;

MAGNETIC FIELDS;

MAGNETIC DEVICES;

EID: 84883441821     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Ikeda et al., Nature Mater. 9, 721 (2010)
2. Y. M. Lee et al., VLSI Tech. Dig. P49 (2010)
3. M. Gajek et al., Appl. Phys. Lett. 100, 132408 (2012)
4. D.C.Worledge et al., Appl. Phys. Lett. 98, 022501 (2011)