Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectric

Nanotechnology

Volumn 25, Issue 8, 2014, Pages

  Basu, Sarbani ^a   Adriyanto, Feri ^a   Wang, Yeong Her ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MISORIENTATION; CRYSTALLINE REGIONS; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; ORGANIC THIN FILM TRANSISTOR (OTFTS); POLYMER GATE DIELECTRICS; SEMICONDUCTOR LAYERS; X-RAY DIFFRACTION SPECTROSCOPY;

ATOMIC FORCE MICROSCOPY; BLENDING; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GRAPHENE; SUBSTRATES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; TRANSISTORS; X RAY DIFFRACTION;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 84893601544     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/8/085201     Document Type: Article

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