A Novel high-efficiency gate drive circuit for normally off-type GaN FET

IEEE Transactions on Industry Applications

Volumn 50, Issue 1, 2014, Pages 593-599

  Umegami, Hirokatsu ^a   Hattori, Fumiya ^a   Nozaki, Yu ^b   Yamamoto, Masayoshi ^a   Machida, Osamu ^b  

^a SHIMANE UNIVERSITY   (Japan)

^b SANKEN ELECTRIC CO LTD   (Japan)

Author keywords

Gallium nitride; GaN field effect transistor (GaN FET); gate drive circuit; gate drive loss analysis; normally off

Indexed keywords

FIELD EFFECT TRANSISTORS;

GATE DRIVE CIRCUITS; GATE DRIVES; HIGH-EFFICIENCY; LOSS ANALYSIS; LOW-LEAKAGE CURRENT; NORMALLY OFF; REVERSE CONDUCTION;

GALLIUM NITRIDE;

EID: 84893216766     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2013.2267512     Document Type: Article

References (14)

1. N. Kaminski and O. Hilt, "SiC and GaN devices-Competition or coexistence?" in Proc. Integr. Power Electron. Syst., Mar. 2012, pp. 1-11.
2. O. Machida, M. Yanagihara, E. Chino, S. Iwakami, N. Kaneko, H. Goto, and K. Ohtsuka, "Evaluation of reverse conduction GaN FETs, " Inst. Electron. Inf. Commun. Eng., vol. 108, no. 377, pp. 29-34, Jan. 2009.
3. N. Kaneko, O. Machida, M. Yanagihara, S. Iwakami, R. Baba, H. Goto, and A. Iwabuchi, "Normally-off AlGaN/GaN HFETs using NiOx gate with recess, " in Proc. Power Semicond. Devices IC's, 2009, pp. 25-28.
4. 2SK3911 datasheet, Toshiba, Tokyo, Japan, 2009. [online]. Available: http://www.toshiba.com/taec/components2/Datasheet-Sync/76/12129. pdf
5. Y. Nozaki, F. Hattori, M. Yamamoto, and O. Machida, "Feasible evaluations of GaN-FET on single phase PFC converter board, " in Proc. Annu. Conf. IEE Jpn. Ind. Appl. Soc., Sep. 2011, vol. 1, pp. 525-526.
6. O. Machida, S.-I. Iwakami, M. Izawa, R. Baba, T. Ehara, M. Yanagihara, N. Kaneko, H. Goto, and A. Iwabuchi, "High breakdown voltage AlGaN/GaN FET in power factor correction circuits, " in Proc. IEEJ Annu. Conf., Mar. 2007, vol. 4, pp. 11-12.
7. J. Everts, J. Das, J. Van den Keybus, J. Genoe, M. Germain, and J. Driesen, "A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon, " in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2010, pp. 3296-3302.
8. T. Morita, S. Tamura, Y. Anda, M. Ishida, Y. Uemoto, T. Ueda, T. Tanaka, and D. Ueda, "99.3% efficiency of three-phase inverter for motor drive using GaN-based gate injection transistors, " in Proc. IEEE Appl. Power Electron. Conf. Expo., Mar. 2011, pp. 481-484.
9. D. Reusch, D. Gilham, Y. Su, and F. C. Lee, "Gallium nitride based 3D integrated non-isolated point of load module, " in Proc. IEEE Appl. Power Electron. Conf. Expo., Feb. 2012, pp. 38-45.
10. B. Hughes, J. Lazar, S. Hulsey, D. Zehnder, D. Matic, and K. Boutros, "GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1MHz, " in Proc. IEEE Appl. Power Electron. Conf. Expo., Feb. 2012, pp. 2506-2508.
11. M. Ishida, Y. Uemoto, T. Ueda, T. Tanaka, and D. Ueda, "GaN power switching devices, " in Proc. IPEC, Jun. 2010, pp. 1014-1017.
12. J. Delaine, P.-O. Jeannin, D. Frey, and K. Guepratte, "High frequency DC-DC converter using GaN device, " in Proc. IEEE Appl. Power Electron. Conf. Expo., Feb. 2012, pp. 1754-1761.
13. F. Hattori and M. Yamamoto, "Proposal and analysis of gate drive circuit suitable for GaN-FET, " in Proc. 38th Annu. IEEE IECON, Oct. 2012, pp. 685-690.
14. H. Umegami, Y. Nozaki, M. Yamamoto, and O. Machida, "A novel high efficiency gate drive circuit for normally off type GaN-FET, " in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2012, pp. 2954-2960.