Determination of diode parameters of a silicon solar cell from variation of slopes of the I-V curve at open circuit and short circuit conditions with the intensity of illumination

Semiconductor Science and Technology

Volumn 25, Issue 1, 2010, Pages

  Khan, Firoz ^a   Singh, S N ^a   Husain, M ^b  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b JAMIA MILLIA ISLAMIA CENTRAL UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL METHOD; DIODE PARAMETERS; EXPONENTIAL MODELS; I - V CURVE; IDEALITY FACTORS; INTENSITY RANGE; IV CHARACTERISTICS; OPEN CIRCUIT CONDITIONS; OPEN CIRCUITS; REVERSE-SATURATION CURRENTS; SERIES RESISTANCES; SHORT CIRCUIT; SHORT-CIRCUIT CONDITIONS; SHUNT RESISTANCES;

DIODES; SILICON SOLAR CELLS; SOLAR CELLS; SUN; WELDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 75649145860     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/1/015002     Document Type: Article

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