Electronic and optical properties of vacancy-doped WS2 monolayers

AIP Advances

Volumn 2, Issue 4, 2012, Pages

  Wei, Jian Wei ^a   Ma, Zeng Wei ^a   Zeng, Hui ^b   Wang, Zhi Yong ^a   Wei, Qiang ^a   Peng, Ping ^c  

^a CHONGQING UNIVERSITY OF TECHNOLOGY   (China)

^b YANGTZE UNIVERSITY   (China)

^c HUNAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHEMICAL BONDS; DEFECTS; DENSITY FUNCTIONAL THEORY; LIGHT ABSORPTION; MONOLAYERS; RED SHIFT; SPIN POLARIZATION; SULFUR COMPOUNDS;

ATOMIC DEFECTS; ATOMIC VACANCIES; ELECTRONIC AND OPTICAL PROPERTIES; IONIC CHARACTER; NON-BONDING ELECTRONS; SPIN TRANSPORT; TUNGSTEN DISULFIDE; VACANCY DEFECTS;

TUNGSTEN COMPOUNDS;

EID: 84871894412     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4768261     Document Type: Article

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