Through-silicon vias using bosch DRIE process technology

Ultra-thin Chip Technology and Applications

Volumn , Issue , 2011, Pages 81-91

  Laermer, Franz ^a   Urban, Andrea ^a  

^a ROBERT BOSCH GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84892006477     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-1-4419-7276-7_9     Document Type: Chapter

References (23)

1. Manos DM, Flamm DL (1989) Plasma etching: an introduction. Academic, Boston
2. Oehrlein GS (1990) Reactive ion etching. In: Rossnagel SM (ed) Reactive ion etching: handbook of plasma processing technology. Noyes, Park Ridge, pp 196-206
3. Schwartz GC, Schaible PM (1979) Reactive ion etching of silicon. J Vac Sci Technol 16:410-413
4. Chapman B (1980) Glow discharge processes. Wiley, New York
5. Li YX, French PJ, Sarro PM et al (1995) Fabrication of a single crystalline silicon capacitive lateral accelerometer using micromachining based on a single step plasma etching. Proc. IEEE Electro Systems Conference. IEEE, Amsterdam, pp 398-403
6. Diem B, Rey P, Reynard S et al (1995) SOI-Simox: from bulk to surface micromachining. A new age for silicon sensors and actuators. Sens Actuat A 4647:8-16
7. Sung KT, Pang SW (1993) J Vac Sci Technol A 11:1206-1210
8. Juan WH, Weigold JW, Pang SW (1996) Dry etching and boron diffusion of heavily doped, high aspect ratio Si trenches. Proceedings of SPIE, Austin, pp 45-55
9. Charlet B, Peccoud L, Dupeux T (1987) SFV-CIPG. Antibes France, 183
10. Charlet B, Peccoud L (1991) European Patent EP-0359777
11. Laermer F, Schilp A (2005) German Patent DE-4241045. US-Patent #5, 501, 893
12. Laermer F, Urban A (2003) European Patent EP-1554747
13. Lee JW, Lee JY (2000) Structural modification of a trench by hydrogen annealing. J Korean Phys Soc 37(6):1034-1039
14. Juan WH, Pang SW (1996) Controlling sidewall smoothness for micromachined Si mirrors and lenses. Vac Soc J Vacuum Sci Technol B 14:4080-4084
15. Nozawa T, Kinoshita T, Nishizuka T, Narai A, Inoue T, Nakaue A (1994) Dry process symposium I-8, Nagoya., pp 37-41
16. Kinoshita T, Hane M, McVittie JP (1996) J Vac Sci Technol B 14:560-565
17. Hwang GS, Giapis KP (1997) J Vac Sci Technol B15:70-87
18. Hwang GS, Giapis KP (1987) Jpn J Appl Phys 37:2291-2301
19. Laermer F, Schilp A (2003) US Patent #6, 926, 844
20. Laermer F (2005) US Patent #7, 361, 287
21. Hopkins J, Ashraf H, Bhardwaj JK, Hopkins J, Johnston I, Shepherd JN (1999) The benefits of process parameter ramping during plasma etching of high aspect ratio silicon structures. Mater Res Soc Symp Proc 546:63
22. Hynes AM, Ashraf H, Bhardwaj JK, Hopkins J, Johnston I, Shepherd JN (1999) Sens Actuat A 74:13
23. Laermer F, Schilp A (2008) US Patent #6, 284, 148.