Dry etching and boron diffusion of heavily doped high-aspect ratio Si trenches

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2879, Issue , 1996, Pages 45-55

  Juan, Wen Han ^a   Weigold, J W ^a   Pang, Stella W ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DRY ETCHING;

BORON; DIFFUSION; DOPING (ADDITIVES); ELECTRON RESONANCE; MICROELECTRONICS; PLASMAS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

ETCHING;

EID: 0030411923     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)