A facile way to deposit conformal Al 2 O 3 thin film on pristine graphene by atomic layer deposition

Applied Surface Science

Volumn 291, Issue , 2014, Pages 78-82

  Cao, Yan Qiang ^a   Cao, Zheng Yi ^a   Li, Xin ^a   Wu, Di ^a   Li, Ai Dong ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Atomic layer deposition; Dielectrics; Functionalization; Graphene; Water physisorption

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMS; DEPOSITS; DIELECTRIC FILMS; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GRAPHENE; GRAPHENE TRANSISTORS; MOLECULES; PHYSISORPTION; SURFACE DEFECTS; THIN FILMS;

FUNCTIONALIZATIONS; GRAPHENE FIELD-EFFECT TRANSISTORS; METAL PRECURSOR; NUCLEATION SITES; PRE-TREATMENT; TRIMETHYLALUMINUM; ULTRATHIN DIELECTRICS; WATER MOLECULE;

ATOMIC LAYER DEPOSITION;

EID: 84891827658     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.10.133     Document Type: Article

References (22)

1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, and A.A. Firsov Science 306 2004 666
2. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, M.I. Katsnelson, I.V. Grigorieva, S.V. Dubonos, and A.A. Firsov Nature 438 2005 197
3. Y. Zhang, Y.W. Tan, H.L. Stormer, and P. Kim Nature 438 2005 201
4. A.A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C.N. Lau Nano Lett. 8 2008 902
5. C. Lee, X. Wei, J.W. Kysar, and J. Hone Science 321 2008 385
6. S.K. Banerjee, L.F. Register, E. Tutuc, D. Basu, K. Seyoung, D. Reddy, and A.H. MacDonald Proc. IEEE 98 2010 2032
7. S.K. Banerjee, L.F. Register, E. Tutuc, D. Reddy, and A.H. MacDonald IEEE Electron Device Lett. 30 2009 158
8. L. Liao, and X. Duan Mater. Sci. Eng. R 70 2010 354
9. R.L. Puurunen J. Appl. Phys. 97 2005 121301
10. D.B. Farmer, and R.G. Gordon Nano Lett. 6 2006 699
11. S. Jandhyala, G. Mordi, B. Lee, G. Lee, C. Floresca, P.R. Cha, J. Ahn, R.M. Wallace, Y.J. Chabal, M.J. Kim, L. Colombo, K. Cho, and J. Kim ACS Nano 6 2012 2722
12. M.J. Hollander, M. LaBella, Z.R. Hughes, M. Zhu, K.A. Trumbull, R. Cavalero, D.W. Snyder, X. Wang, E. Hwang, and S. Datta et al. Nano Lett. 11 2011 3601
13. I. Meric, C.R. Dean, A.F. Young, N. Baklitskaya, N.J. Tremblay, C. Nuckolls, P. Kim, and K.L. Shepard Nano Lett. 14 2011 1093
14. J.M. Alaboson, Q.H. Wang, J.D. Emery, A.L. Lipson, M.L. Bedzyk, J.W. Elam, M.J. Pellin, and M.C. Hersam ACS Nano 5 2011 5223
15. O.M. Nayfeh, T. Marr, and M. Dubey IEEE Electron Device Lett. 32 2011 473
16. L. Liu, S. Ryu, M.R. Tomasik, E. Stolyarova, N. Jung, M.S. Hybertsen, M.L. Steigerwald, L.E. Brus, and G.W. Flynn Nano Lett. 8 2008 1965
17. Y. Xuan, Y.Q. Wu, T. Shen, M. Qi, M.A. Capano, J.A. Cooper, and P.D. Ye Appl. Phys. Lett. 92 2008 013101
18. X.L. Wang, S.M. Tabakman, and H.J. Dai J. Am. Chem. Soc. 130 2008 8152
19. F. Schedin, A.K. Geim, S.V. Morozov, E.W. Hill, P. Blake, M.I. Kats-nelson, and K.S. Novoselov Nat. Mater. 6 2007 652
20. X.Q. Lin, J. Ni, and C. Fang J. Appl. Phys. 113 2013 034306
21. G. Lee, B. Lee, J. Kim, and K. Cho J. Phys. Chem. C 113 2009 14225
22. A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K.S. Novoselov, S. Roth, and A.K. Geim Phys. Rev. Lett. 97 2006 187401