Spin hall effect clocking of nanomagnetic logic without a magnetic field

Nature Nanotechnology

Volumn 9, Issue 1, 2014, Pages 59-63

  Bhowmik, Debanjan ^a   You, Long ^a   Salahuddin, Sayeef ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CLOCKS; CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; COMPUTATION THEORY; ENERGY DISSIPATION; IRON COMPOUNDS; MAGNETS; MOS DEVICES; NANOMAGNETICS; OXIDE SEMICONDUCTORS; SPIN HALL EFFECT; TANTALUM;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONVENTIONAL TRANSISTORS; MAGNETIC SWITCHING; MAGNITUDE REDUCTION; META-STABLE STATE; NANOMAGNETIC LOGIC; PERPENDICULAR MAGNETIZATION; STATE OF THE ART;

COMPUTER CIRCUITS;

METAL OXIDE; NANOMATERIAL; QUANTUM DOT; TANTALUM;

ARTICLE; DIPOLE; ELECTRON; MAGNET; MAGNETIC FIELD; MAGNETISM; MOLECULAR CLOCK; MOLECULAR PHYSICS; POLARIZATION; PRIORITY JOURNAL; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SPIN HALL EFFECT; TORQUE;

EID: 84891821487     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2013.241     Document Type: Article

References (30)

1. Salahuddin, S. & Datta, S. Interacting systems for self-correcting low power switching. Appl. Phys. Lett. 90, 093503 (2007).
2. Behin-Aein, B., Datta, D., Salahuddin, S. & Datta, S. Proposal for an all-spin logic device with built-in memory. Nature Nanotech. 5, 266-270 (2010).
3. Bandyopadhyay, S. & Cahay, M. Introduction to Spintronics (CRC, 2008).
4. Nikonov, D. E., Bourianoff G. I. & Ghani, T. Proposal of a spin torque majority gate logic. IEEE Electron. Dev. Lett. 32, 1128-1130 (2011).
5. Ikeda, S. et al. Magnetic tunnel junctions for spintronic memories and beyond. IEEE Trans. Electron. Dev. 54, 991-1002 (2007).
6. Ohno, H., Endoh, T., Hanyu, T., Naoki, K. & Ikeda, S. Magnetic tunnel junction for nonvolatile CMOS logic. IEEE IEDM Tech. Digest 2010, 218-221 (2010).
7. Cowburn, R. P. & Welland, M. E. Room temperature magnetic quantum cellular automata. Science 287, 1466-1468 (2000).
8. Imre, A. et al. Majority logic gate for magnetic quantum-dot cellular automata. Science 311, 205-208 (2006).
9. Atulasimha, J. & Bandyopadhyay, S. Bennett clocking of nanomagnetic logic using multiferroic single-domain nanomagnets. Appl. Phys. Lett. 97, 173105 (2010).
10. Carlton, D. B., Emley, N. C., Tuchfeld, E. & Bokor, J. Simulation studies of nanomagnet-based logic architecture. Nano Lett. 8, 4173-4178 (2008).
11. Alam, M. T. et al. On-chip clocking of nanomagnetic logic lines and gates. IEEE Trans. Nanotechnol. 11, 273-286 (2012).
12. Ju, X. et al. Nanomagnetic logic from partially irradiated Co/Pt nanomagnets. IEEE Trans. Nanotechnol. 11, 97-104 (2012).
13. Breitkreutz, S. et al. Majority gate for nanomagnetic logic with perpendicular magnetic anisotropy. IEEE Trans. Magn. 48, 4336-4339 (2012).
14. Lambson, B., Carlton, D. & Bokor, J. Exploring the thermodynamic limits of computation in intergrated systems: magnetic memory, nanomagnetic logic, and the Landauer limit. Phys. Rev. Lett. 107, 010604 (2011).
15. Roy, K., Bandyopadhyay, S. & Atulasimha, J. Hybrid spintronics and straintronics: a magnetic technology for ultra low power energy computing and signal processing. Appl. Phys. Lett. 99, 063108 (2011).
16. Liu, L. et al. Spin-torque switching with the giant spin Hall effect of tantalum. Science 336, 555-558 (2012).
17. Liu, L., Lee, O. J., Gudmundsen, T. J., Ralph, D. C. & Buhrman, R. A. Currentinduced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect. Phys. Rev. Lett. 109, 096602 (2012).
18. Haazen, P. P. J. et al. Domain wall depinning governed by the spin Hall effect. Nature Mater. 12, 299-303 (2013).
19. Miron, I. M. et al. Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer. Nature Mater. 9, 230-234 (2010).
20. Miron, I. M. et al. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection. Nature 476, 189-193 (2011).
21. Suzuki, T. et al. Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire. Appl. Phys. Lett. 98, 142505 (2011).
22. Kim, J. et al. Layer thickness dependence of the current induced effective field vector in Ta/CoFeB/MgO. Nature Mater. 12, 240-245 (2013).
23. Hirsch, J. E. Spin Hall effect. Phys. Rev. Lett. 83, 1834-1837 (1999).
24. Ikeda, S. et al. A perpendicular anisotropy CoFeB-MgO magnetic tunnel junction. Nature Mater. 9, 721-724 (2010).
25. Bhowmik, D., You, L. & Salahuddin, S. Possible route to low current, high speed, dynamic switching in a perpendicular anisotropy CoFeB-MgO junction using spin Hall effect of Ta. IEEE IEDM Tech. Digest 2012, 29.7.1-29.7.4 (2012).
26. Nagaosa, N., Sinova, J., Onoda, S., MacDonald, A. H. & Ong, N. P. Anomalous Hall effect. Rev. Mod. Phys. 82, 1539-1592 (2010).
27. Alexandrou, M. et al. Spatial sensitivity mapping of Hall crosses using patterned magnetic nanostructures. J. Appl. Phys. 108, 043920 (2010).
28. Carlton, D. B. et al. Investigation of defects and errors in nanomagnetic logic circuits. IEEE Trans. Nanotechnol. 11, 760-762 (2012).
29. Nikonov, D. E. & Young, I. Overview of beyond-CMOS devices and a uniform methodology for their benchmarking. Proc. IEEE http://dx.doi.org/10. 1109/JPROC.2013.2252317 (2013).
30. Niimi, Y. et. al. Giant spin Hall effect induced by skew scattering from bismuth impurities inside thin film CuBi alloys. Phys. Rev. Lett. 109, 156602 (2012).