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Volumn 38, Issue , 2013, Pages 950-958

Lifetime measurements on attached epilayers and detached epifoils grown on reorganised porous silicon showing a bulk lifetime exceeding 100 μs

Author keywords

Bulk lifetime; Epilayer; PC1D; PL; Porous silicon; QSSPC; Surface recombination velocity; PCD

Indexed keywords


EID: 84891603207     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2013.07.369     Document Type: Conference Paper
Times cited : (9)

References (12)
  • 7
    • 62549146213 scopus 로고    scopus 로고
    • Determining the excess carrier lifetime in crystalline silicon thin-films by photoluminescence measurements
    • Rosenits P, Roth T, Warta W., Reber S, Glunz SW. Determining the excess carrier lifetime in crystalline silicon thin-films by photoluminescence measurements. Journal of Applied Physics 2009; 105: 053714.
    • (2009) Journal of Applied Physics , vol.105 , pp. 053714
    • Rosenits, P.1    Roth, T.2    Warta, W.3    Reber, S.4    Glunz, S.W.5
  • 10
    • 10044269932 scopus 로고    scopus 로고
    • Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
    • MacDonald D, Geerligs L J. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon. Applied Physics Letters 2004; 85 (18): 4061-4063.
    • (2004) Applied Physics Letters , vol.85 , Issue.18 , pp. 4061-4063
    • MacDonald, D.1    Geerligs, L.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.