Determination of the minority carrier lifetime in crystalline silicon thin-film material

Progress in Photovoltaics: Research and Applications

Volumn 22, Issue 2, 2014, Pages 180-188

  Walter, Dominic ^a,b   Rosenits, Philipp ^a   Berger, Bastian ^c,d   Reber, Stefan ^a   Warta, Wilhelm ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^c TU BERGAKADEMIE FREIBERG   (Germany)

^d Freiberger Compound Material GmbH   (Germany)

Author keywords

crystalline silicon thin films; microwave detected photoconductivity decay; minority carrier lifetime

Indexed keywords

CRYSTALLINE SILICONS; MEASUREMENT CONDITIONS; MINORITY CARRIER LIFETIMES; PHOTOCONDUCTIVITY DECAY; RECOMBINATION VELOCITY; SIMULATIONS AND MEASUREMENTS; SURFACE AND INTERFACES; SYSTEMATIC DEVIATION;

CARRIER LIFETIME; EPITAXIAL GROWTH; MATERIALS; MICROELECTRONICS;

INTERFACES (MATERIALS);

EID: 84892808281     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2242     Document Type: Article

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