Evaluation of the influence of an embedded porous silicon layer on the bulk lifetime of epitaxial layers and the interface recombination at the epitaxial layer/porous silicon interface

Progress in Photovoltaics: Research and Applications

Volumn 22, Issue 11, 2014, Pages 1118-1127

  Radhakrishnan, Hariharsudan Sivaramakrishnan ^a,b   Dross, Frederic ^a,c   Debucquoy, Maarten ^a   Rosenits, Philipp ^d   Van Nieuwenhuysen, Kris ^a   Gordon, Ivan ^a   Poortmans, Jef ^a,b   Mertens, Robert ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Hanwha Solar America   (United States)

^d FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Back surface field; Bulk lifetime; Effective surface interface recombination velocity; Epicell; Photoluminescence; Porous silicon

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SILICON WAFERS; SUBSTRATES; THIN FILM SOLAR CELLS;

BACK SURFACE FIELDS; BULK LIFETIME; EPICELL; EPITAXIAL THIN FILMS; INTERFACE RECOMBINATION; INTERNAL SURFACE AREA; POROUS SILICON LAYERS; RECOMBINATION VELOCITY;

POROUS SILICON;

EID: 84908153310     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2336     Document Type: Article

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