0.5 THz performance of a type-II DHBT with a doping-graded and constant-composition GaAsSb base

IEEE Electron Device Letters

Volumn 35, Issue 1, 2014, Pages 24-26

  Xu, Huiming ^a   Wu, Barry ^b   Iverson, Eric W ^a   Low, Thomas S ^b   Feng, Milton ^a  

^a United States of America   (United States)

^b AGILENT TECHNOLOGIES   (United States)

Author keywords

DHBT; doping graded; GaAsSb; InP; millimeter wave

Indexed keywords

COMPOSITION-GRADED; CONSTANT COMPOSITION; DHBT; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; EMITTER DEVICES; GAASSB; INP; WET ETCH PROCESS;

MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM;

EID: 84891558527     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2290299     Document Type: Article

References (12)

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