Bottom-up graphene nanoribbon field-effect transistors

Applied Physics Letters

Volumn 103, Issue 25, 2013, Pages

  Bennett, Patrick B ^a,b   Pedramrazi, Zahra ^a   Madani, Ali ^b   Chen, Yen Chia ^a,c   De Oteyza, Dimas G ^a,d   Chen, Chen ^a   Fischer, Felix R ^a,c   Crommie, Michael F ^a,c   Bokor, Jeffrey ^b,c,e  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d CENTRO MIXTO CSIC UPV EHU   (Spain)

^e NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EDGE STRUCTURES; ELECTRONIC DEVICE; ENVIRONMENTAL SENSITIVITIES; GRAPHENE NANO-RIBBON; GRAPHENE NANORIBBONS (GNRS); LAYER TRANSFER PROCESS; NARROW WIDTH; TRANSPORT BEHAVIOR;

ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS;

NANORIBBONS;

EID: 84891438260     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4855116     Document Type: Article

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