Impact of high pressure on the optical and electrical properties of indium-doped n-type wurtzite zinc oxide according to first principles

Materials Science in Semiconductor Processing

Volumn 19, Issue 1, 2014, Pages 66-71

  Zhao, Yanfang ^a   Gong, Jie ^a   Yang, Haiying ^a   Yang, Ping ^a  

^a JIANGSU UNIVERSITY   (China)

Author keywords

First principles; High pressures; n type ZnO; Optical properties

Indexed keywords

CONDUCTION-BAND MINIMUM; FIRST-PRINCIPLES; HIGH PRESSURE; LOWER ENERGIES; N-TYPE ZNO; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL PARAMETER; VALENCE-BAND MAXIMUMS;

ENERGY GAP; INDIUM; LATTICE CONSTANTS; OPTICAL PROPERTIES; ZINC OXIDE; ZINC SULFIDE;

ELECTRIC PROPERTIES;

EID: 84891398072     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2013.10.030     Document Type: Article

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