Optical and electrical properties of ZnO:Al thin films synthesized by low-pressure pulsed laser deposition

Materials Science in Semiconductor Processing

Volumn 14, Issue 1, 2011, Pages 48-51

  Gu, X Q ^a   Zhu, L P ^a   Cao, L ^a   Ye, Z Z ^a   He, H P ^a   Chu, Paul K ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Conductivity; Optical properties; Thin films; ZnO

Indexed keywords

BAND GAPS; CONDUCTIVITY; DEPOSITION PRESSURES; ELECTRON CONCENTRATION; HALL MEASUREMENTS; LOW OXYGEN PRESSURE; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL TRANSMITTANCE; OXYGEN PRESSURE; VISIBLE RANGE; ZNO; ZNO:AL FILMS; ZNO:AL THIN FILMS;

ALUMINUM; DEPOSITION; ELECTRIC PROPERTIES; OPACITY; OXYGEN; PULSED LASER DEPOSITION; PULSED LASERS; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

OPTICAL FILMS;

EID: 79952619798     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2011.01.003     Document Type: Article

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