메뉴 건너뛰기




Volumn , Issue , 2013, Pages

Exploring ESD challenges in sub-20-nm bulk FinFET CMOS technology nodes

Author keywords

[No Author keywords available]

Indexed keywords

BULK FINFET; CMOS NODES; CMOS TECHNOLOGY; ESD PERFORMANCE; SIGNIFICANT DETERIORATIONS; TECHNOLOGY OPTIONS;

EID: 84890539564     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (4)

References (14)
  • 1
  • 3
    • 33847748559 scopus 로고    scopus 로고
    • Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length
    • K. Okano, et al., "Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length," International Electron Devices Meeting (IEDM), 2005, pp.721-724.
    • (2005) International Electron Devices Meeting (IEDM) , pp. 721-724
    • Okano, K.1
  • 4
    • 46049121041 scopus 로고    scopus 로고
    • Fully integrated advanced bulk FinFETs architecture featuring partially-insulating technique for DRAM cell application of 40nm generation and beyond
    • J.-M. Park, et al., "Fully integrated advanced Bulk FinFETs architecture featuring partially-insulating technique for DRAM cell application of 40nm generation and beyond," International Electron Devices Meeting (IEDM), 2006, pp.1-4.
    • (2006) International Electron Devices Meeting (IEDM) , pp. 1-4
    • Park, J.-M.1
  • 5
    • 33244495722 scopus 로고    scopus 로고
    • Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (bulk FinFETs)
    • T.-S. Park, et al., "Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (bulk FinFETs)," IEEE Trans. on Electron Devices, vol.53, no.3, pp. 481-487, 2006.
    • (2006) IEEE Trans. on Electron Devices , vol.53 , Issue.3 , pp. 481-487
    • Park, T.-S.1
  • 6
    • 77954212392 scopus 로고    scopus 로고
    • Next generation bulk FinFET devices and their benefits for ESD robustness
    • A. Griffoni, et al., "Next generation bulk FinFET devices and their benefits for ESD robustness," EOS/ESD Symposium, 2009, pp. 59-68.
    • (2009) EOS/ESD Symposium , pp. 59-68
    • Griffoni, A.1
  • 7
    • 84890443415 scopus 로고    scopus 로고
    • Intel's revolutionary 22 nm transistor technology
    • May
    • M. Bohr, et al., "Intel's revolutionary 22 nm transistor technology," in Presentation from Intel, May, 2011.
    • (2011) Presentation from Intel
    • Bohr, M.1
  • 8
    • 84890483178 scopus 로고    scopus 로고
    • On gated diodes for ESD protection in bulk FinFET CMOS technology
    • S. Thijs, et al., "On gated diodes for ESD protection in bulk FinFET CMOS technology," EOS/ESD Symposium, 2011, pp. 27-34.
    • (2011) EOS/ESD Symposium , pp. 27-34
    • Thijs, S.1
  • 10
    • 77952411137 scopus 로고    scopus 로고
    • Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond
    • H. Kawasaki, et al., "Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond," International Electron Devices Meeting (IEDM), 2009, pp.1-4.
    • (2009) International Electron Devices Meeting (IEDM) , pp. 1-4
    • Kawasaki, H.1
  • 11
    • 39549086683 scopus 로고    scopus 로고
    • Investigation of FinFET devices for 32 nm technologies and beyond
    • H. Shang, et al., "Investigation of FinFET devices for 32 nm technologies and beyond," VLSI Technology, 2006, pp. 54-55.
    • (2006) VLSI Technology , pp. 54-55
    • Shang, H.1
  • 12
    • 84869821738 scopus 로고    scopus 로고
    • High-k metal gate-bounded Silicon controlled rectifier for ESD protection
    • T.-H. Chang, et al., "High-k metal gate-bounded Silicon controlled rectifier for ESD protection," EOS/ESD Symposium, 2012, pp. 324-330.
    • (2012) EOS/ESD Symposium , pp. 324-330
    • Chang, T.-H.1
  • 13
    • 4043078500 scopus 로고    scopus 로고
    • High holding voltage cascoded LVTSCR structures for 5.5-V tolerant ESD protection clamps
    • V. Vashchenko, et al., "High holding voltage cascoded LVTSCR structures for 5.5-V tolerant ESD protection clamps," IEEE Trans. on Devices and Materials Reliability, vol.4, no.2, pp. 273-280, 2004.
    • (2004) IEEE Trans. on Devices and Materials Reliability , vol.4 , Issue.2 , pp. 273-280
    • Vashchenko, V.1
  • 14
    • 77956060151 scopus 로고    scopus 로고
    • Sentaurus suite v2012-06, Synopsys inc., CA, USA
    • Sentaurus suite v2012-06, Synopsys inc., Mountain View, CA, USA.
    • Mountain View


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.