Strain-engineered surface transport in Si(001): Complete isolation of the surface state via tensile strain

Physical Review Letters

Volumn 111, Issue 24, 2013, Pages

  Zhou, Miao ^a   Liu, Zheng ^a   Wang, Zhengfei ^a   Bai, Zhaoqiang ^b   Feng, Yuanping ^b   Lagally, Max G ^c   Liu, Feng ^a  

^a UNIVERSITY OF UTAH   (United States)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSING DEVICES; DEFORMATION POTENTIAL; NON-EQUILIBRIUM GREEN'S FUNCTION; QUANTUM TRANSPORT SIMULATIONS; QUANTUM-INFORMATION PROCESSING; STRAIN ENGINEERING; SURFACE CONDUCTANCE; SURFACE VALENCE STATE;

HAMILTONIANS; QUANTUM ELECTRONICS; SILICON; SURFACE STATES;

TENSILE STRAIN;

EID: 84890286496     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.111.246801     Document Type: Article

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