Effects of layer stacking on the combination raman modes in graphene

ACS Nano

Volumn 5, Issue 3, 2011, Pages 1594-1599

  Rao, Rahul ^a   Podila, Ramakrishna ^b   Tsuchikawa, Ryuichi ^c   Katoch, Jyoti ^c   Tishler, Derek ^c   Rao, Apparao M ^b   Ishigami, Masa ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b CLEMSON UNIVERSITY   (United States)

^c UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

combination; double resonance; graphene; Raman; spectroscopy

Indexed keywords

BI-LAYER; BRILLOUIN ZONES; COMBINATION; COMBINATION MODES; DOUBLE RESONANCE; GRAPHENE LAYERS; IN-PLANE; K POINTS; LAYER STACKING; LO PHONONS; LONGITUDINAL OPTICAL PHONONS; NUMBER OF LAYERS; OUT-OF-PLANE; PEAK FREQUENCIES; RAMAN; RAMAN MODES; SILICONDIOXIDE SUBSTRATES; TRANSVERSE OPTICAL;

PHONONS; RESONANCE; SILICA;

GRAPHENE;

GRAPHITE; NANOMATERIAL; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; RAMAN SPECTROMETRY; SURFACE PROPERTY; ULTRASTRUCTURE;

GRAPHITE; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SILICON DIOXIDE; SPECTRUM ANALYSIS, RAMAN; SURFACE PROPERTIES;

EID: 79952939141     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn1031017     Document Type: Article

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