High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2013, Pages

  Lee, Sanghoon ^a   Huang, Cheng Ying ^a   Carter, Andrew D ^a   Law, Jeremy J M ^a   Elias, Doron C ^a   Chobpattana, Varistha ^a   Thibeault, Brian J ^a   Mitchell, William ^a   Stemmer, Susanne ^a   Gossard, Arthur C ^a   Rodwell, Mark J W ^a  

^a University of California   (United States)

Author keywords

digital etching style; InGaAs MOSFETs; source drain regrowth; substitutional gate; surface channel

Indexed keywords

DIGITAL ETCHING STYLE; MOSFETS; SOURCE-DRAIN REGROWTHS; SUBSTITUTIONAL-GATE; SURFACE CHANNEL;

ETCHING; GALLIUM; INDIUM; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM; SURFACES; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 84882305005     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2013.6562630     Document Type: Conference Paper

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