Record extrinsic transconductance (2.45 mS/μm at VDS = 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2013, Pages

  Lee, S ^a   Huang, C Y ^a   Carter, A D ^a   Elias, D C ^a   Law, J J M ^a   Chobpattana, V ^a   Kramer, S ^a   Thibeault, B J ^a   Mitchell, W ^a   Stemmer, S ^a   Gossard, A C ^a   Rodwell, M J W ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRINSIC TRANSCONDUCTANCE; GATE LENGTH; III-V MOSFETS; LONG CHANNEL DEVICES; MOSHEMTS; PEAK TRANSCONDUCTANCE; SOURCE-DRAIN; SOURCE-DRAIN REGROWTHS;

GALLIUM; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 84883393553     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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