Novel Cu-to-Cu bonding with Ti passivation at 180^{\circ}{\rm C} in 3-D integration

IEEE Electron Device Letters

Volumn 34, Issue 12, 2013, Pages 1551-1553

  Huang, Yan Pin ^a   Chien, Yu San ^a   Tzeng, Ruoh Ning ^a   Shy, Ming Shaw ^b   Lin, Teu Hua ^b   Chen, Kou Hua ^b   Chiu, Chi Tsung ^b   Chiou, Jin Chern ^a   Chuang, Ching Te ^a   Hwang, Wei ^a   Tong, Ho Ming ^b   Chen, Kuan Neng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b ADVANCED SEMICONDUCTOR ENGINEERING INC   (Taiwan)

Author keywords

3 D integration; Cu bonding; Ti passivation

Indexed keywords

3-D INTEGRATION; BOND STRUCTURES; BONDING TEMPERATURES; CMOS COMPATIBLE; DIFFUSION BEHAVIOR; ELECTRICAL STABILITY; HUMIDITY AND TEMPERATURES; LOW TEMPERATURES;

INTEGRATION;

PASSIVATION;

EID: 84889592827     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2285702     Document Type: Article

References (12)

1. D. Sylvester and C. Hu, "Analytical modeling and characterization of deep-submicrometer interconnect," Proc. IEEE, vol. 89, no. 5, pp. 634-664, May 2001.
2. A. Rahman and R. Reif, "System-level performance evaluation of threedimensional integrated circuits," IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 8, no. 6, pp. 671-678, Dec. 2000. (Pubitemid 32254796)
3. V. W. C. Chan, P. C. H. Chan, and M. Chan, "Multiple layers of CMOS integrated circuits using recrystallized silicon film," IEEE Electron Device Lett., vol. 22, no. 2, pp. 77-79, Feb. 2001. (Pubitemid 32254998)
4. K. N. Chen, A. Fan, C. S. Tan, et al., "Bonding parameters of blanket copper wafer bonding," J. Electron. Mater., vol. 35, no. 2, pp. 230-234, 2006. (Pubitemid 43384535)
5. K. T. Ko and K. N. Chen, "Low temperature bonding technology for 3D integration," Microelectron. Rel., vol. 52, pp. 302-311, Feb. 2012.
6. P. A. Korzhavyi, I. A. Abrikosov, B. Johansson, et al., "First-principles calculations of the vacancy formation energy in transition and noble metals," Phys. Rev. B, vol. 59, no. 18, pp. 11693-11703, May 1999.
7. E. S. Machlin, An Introduction to Aspects of Thermodynamics and Kinetics Relevant to Materials Science. Burlington, MA, USA: Elsevier, 2007, pp. 248-252.
8. S. Tsukimoto, T. Kabe, K. Ito, et al., "Effect of annealing ambient on the self-formation mechanism of diffusion barrier layers used in Cu(Ti) interconnects," J. Electron. Mater., vol. 36, no. 3, pp. 258-265, 2007. (Pubitemid 46675348)
9. S. Y. Hsu, H. Y. Chen, and K. N. Chen, "Cosputtered Cu/Ti bonded interconnects with a self-formed adhesion layer for three-dimensional integration applications," IEEE Electron Device Lett., vol. 33, no. 7, pp. 1048-1050, Jul. 2012.
10. K. N. Chen, A. Fan, and C. S. Tan, "Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology," IEEE Electron Device Lett., vol. 25, no. 1, pp. 10-12, Jan. 2004.
11. P. Gueguen, L. Di Cioccio, P. Morfouli, et al., "Copper direct bonding: An innovative 3D interconnect," in Proc. IEEE Electron. Compon. Technol. Conf., Jun. 2010, pp. 878-883.
12. Y. J. Chang, C. T. Ko, and K. N. Chen, "Electrical and reliability investigation of Cu TSVs with low-temperature Cu/Sn and BCB hybrid bond scheme," IEEE Electron Device Lett., vol. 34, no. 1, pp. 102-104, Jan. 2013.