Short-term memory to long-term memory transition mimicked in IZO homojunction synaptic transistors

IEEE Electron Device Letters

Volumn 34, Issue 12, 2013, Pages 1581-1583

  Guo, Liqiang ^a,b   Wan, Qing ^a,b   Wan, Changjin ^a,b   Zhu, Liqiang ^a,b   Shi, Yi ^a,b  

^a NANJING UNIVERSITY   (China)

^b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

Electrochemical doping; memory transition; synaptic transistor

Indexed keywords

ELECTROCHEMICAL DOPING; ELECTROSTATIC MODULATION; INDIUM ZINC OXIDES; LONG TERM MEMORY; MOBILE PROTONS; PROTON-CONDUCTING ELECTROLYTE; PULSE AMPLITUDE; SHORT TERM MEMORY;

BRAIN; CONDUCTIVE FILMS; PROTONS;

SEMICONDUCTOR DOPING;

EID: 84889579135     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2286074     Document Type: Article

References (18)

1. A. Pascual-Leone, A. Amedi, F. Fregni, et al., "The plastic human brain cortex," Annu. Rev. Neurosci., vol. 28, pp. 377-401, Jul. 2005. (Pubitemid 41098910)
2. L. Zhang, Q. X. Lai, and Y. Chen, "Configurable neural phase shifter with spike-timing-dependent plasticity," IEEE Electron Device Lett., vol. 31, no. 7, pp. 716-718, Jul. 2010.
3. Q. X. Lai, L. Zhang, Z. Y. Li, et al., "Ionic/electronic hybrid materials integrated in a synaptic transistor with signal processing and learning functions," Adv. Mater., vol. 22, no. 22, pp. 2448-2453, Jun. 2010.
4. T. Chang, S. H. Jo, and W. Lu, "Short-term memory to long-term memory transition in a nanoscale memristor," ASC Nano, vol. 5, no. 9, pp. 7669-7676, Sep. 2011.
5. K. Kim, C. L. Chen, Q. Truong, et al., "A carbon nanotube synapse with dynamic logic and learning," Adv. Mater., vol. 25, no. 12 pp. 1693-1700, Mar. 2013.
6. T. Ohno, T. Hasegawa, T. Tsuruoka, et al., "Short-term plasticity and long-term potentiation mimicked in single inorganic synapses," Nature Mater., vol. 10, no. 8, pp. 591-595, Aug. 2011.
7. N. C. Su, S. J. Wang, C. C. Huang, et al., "Low-voltage-driven flexible InGaZnO thin-film transistor with small subthreshold swing," IEEE Electron Device Lett., vol. 31, no. 7, pp. 680-682, Jul. 2010.
8. K. Jang, J. Raja, Y. J. Lee, et al., "Effects of carrier concentration, indium content, and crystallinity on the electrical properties of indiumtin-zinc-oxide thin-film transistors," IEEE Electron Device Lett., vol. 34, no. 9, pp. 1151-1153, Sep. 2013.
9. L. F. Lan, M. J. Zhao, N. N. Xiong, et al., "Low-voltage high-stability indium-zinc oxide thin-film transistor gated by anodized neodymiumdoped aluminum," IEEE Electron Device Lett., vol. 33, no. 6, pp. 827-829, Jun. 2012.
10. A. X. Lu, J. Sun, J. Jiang, et al., "One shadow mask self-assembled ultralow voltage coplanar homojunction thin-film transistors," IEEE Electron Device Lett., vol. 31, no. 10, pp. 1137-1139, Oct. 2010.
11. J. M. Zhou, C. J. Wan, L. Q. Zhu, et al., "Synaptic behaviors mimicked in flexible oxide-based transistors on plastic substrates," IEEE Electron Device Lett., vol. 34, no. 11, pp. 1433-1435, Nov. 2013.
12. D. C. Rubin, S. Hinton, and A. Wenzel, "The precise time course of retention," J. Experim. Psychol. Learn., vol. 25, no. 5, pp. 1161-1176, Sep. 1999.
13. A. Nayak, T. Ohno, T. Tsuruoka, et al., "Controlling the synaptic plasticity of a Cu2S gap-type atomic switch," Adv. Funct. Mater., vol. 22, no. 17, pp. 3606-3613, May 2012.
14. T. Hasegawa, K. Terabe, T. Sakamoto, et al., "Nanoionics switching devices: 'Atomic switches,"' MRS Bull., vol. 34, no. 12, pp. 929-934, Dec. 2009.
15. J. C. Magee, "Dendritic integration of excitatory synaptic input," Nature Rev. Neurosci., vol. 1, no. 3, pp. 181-190, Dec. 2000.
16. Z. Q. Wang, H. Y. Xu, X. H. Li, et al., "Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor," Adv. Funct. Mater., vol. 22, no. 22, pp. 2759-2765, Jul. 2012.
17. D. C. Rubin and A. Wenzel, "One hundred years of forgetting: A quantitative description of retention," Psychol. Rev., vol. 103, no. 4, pp. 734-760, Apr. 1996.
18. C. J.Wan, L. Q. Zhu, J. M. Zhou, et al., "Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxidebased synaptic transistors," Nanoscale, vol. 5, no. 21, pp. 10194-10199, 2013.