Effects of carrier concentration, indium content, and crystallinity on the electrical properties of indium-tin-zinc-oxide thin-film transistors

IEEE Electron Device Letters

Volumn 34, Issue 9, 2013, Pages 1151-1153

  Jang, Kyungsoo ^a   Raja, Jayapal ^a   Lee, Youn Jung ^a   Kim, Doyoung ^b   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

^b Ulsan College   (South Korea)

Author keywords

Carrier concentration; crystallinity; In content; Indium Tin Zinc oxide (ITZO); next generation displays; thin film transistor (TFT)

Indexed keywords

C. THIN FILM TRANSISTOR (TFT); CRYSTALLINITIES; FIELD-EFFECT MOBILITIES; INDIUM-TIN-ZINC-OXIDE (ITZO); ON/OFF CURRENT RATIO; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); ULTRAHIGH RESOLUTION;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; TIN; TIN OXIDES; ZINC;

THIN FILM TRANSISTORS;

EID: 84883145520     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2272084     Document Type: Article

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