메뉴 건너뛰기




Volumn , Issue , 2006, Pages 101-107

Sequential 3D IC fabrication-Challenges and prospects

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATED CIRCUIT; CHEMICAL VAPOR; CMOS DEVICES; LOW THERMAL BUDGET; PULSED LASER ANNEALING;

EID: 84888226680     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (9)

References (19)
  • 1
  • 2
    • 33747566850 scopus 로고    scopus 로고
    • 3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
    • May
    • K. Banerjee et al, "3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration", Proceedings of the IEEE, Volume 89, Issue 5, May 2001,Page(s): 602-633.
    • (2001) Proceedings of the IEEE , vol.89 , Issue.5 , pp. 602-633
    • Banerjee, K.1
  • 3
    • 33746910456 scopus 로고    scopus 로고
    • Enabling SOI-based assembly technology for three-dimensional (3D) integrated circuits (ICs)
    • A. W. Topol et al, "Enabling SOI-based assembly technology for three-dimensional (3D) integrated circuits (ICs)", Digest of the International Electron Devices Meeting, 2005, Page(s): 352-355.
    • (2005) Digest of the International Electron Devices Meeting , pp. 352-355
    • Topol, A.W.1
  • 4
    • 0029406140 scopus 로고
    • Chemical free room temperature wafer to wafer direct bonding
    • November
    • S. N. Farrens et al., "Chemical free room temperature wafer to wafer direct bonding" Journal of Electrochemical Society Vol 142, No 11, November 1995, Page(s): 3949-3955.
    • (1995) Journal of Electrochemical Society , vol.142 , Issue.11 , pp. 3949-3955
    • Farrens, S.N.1
  • 5
    • 2342592574 scopus 로고    scopus 로고
    • High quality single crystal Ge on insulator by liquid phase epitaxy on Si substrates
    • 5 April
    • Y. Liu et al, "High quality single crystal Ge on insulator by liquid phase epitaxy on Si substrates" Applied Physics Letters, Vol 84, No. 14, 5 April 2004, Page(s): 2563-2565.
    • (2004) Applied Physics Letters , vol.84 , Issue.14 , pp. 2563-2565
    • Liu, Y.1
  • 8
    • 0026240626 scopus 로고
    • Thermal diffusivity of crystalline and liquid silicon and an anomaly at melting
    • 15 October
    • K. Yamamoto, T. Abe & S-I Takasu, "Thermal Diffusivity of Crystalline and Liquid Silicon and an Anomaly at Melting" Jpn. J. Appl. Phys. Vol. 30, No. 10, 15 October 1991
    • (1991) Jpn. J. Appl. Phys. , vol.30 , Issue.10
    • Yamamoto, K.1    Abe, T.2    Takasu, S.-I.3
  • 10
    • 84888222694 scopus 로고    scopus 로고
    • n, k Database. Available online: http://ww.ioffe.ru/SVA/NSM/nk/index.html
  • 11
    • 5044233938 scopus 로고
    • Heat-flow calculation of pulsed excimer ultraviolet laser's melting of amorphous and crystalline silicon surfaces
    • May
    • C. K. Ong, E. H. Sin & H. S. Tan, "Heat-flow calculation of pulsed excimer ultraviolet laser's melting of amorphous and crystalline silicon surfaces", J. Opt. Soc. Am. B/Vol. 3, No. 5/May 1986.
    • (1986) J. Opt. Soc. Am. B/ , vol.3 , Issue.5
    • Ong, C.K.1    Sin, E.H.2    Tan, H.S.3
  • 13
    • 0033281305 scopus 로고    scopus 로고
    • Monte Carlo modeling of threshold variation due to dopant fluctuation
    • June
    • D. J. Frank et al, "Monte Carlo modeling of threshold variation due to dopant fluctuation," Digest of the Symposium of VLSI Technology, June 1999, Pages: 169-170.
    • (1999) Digest of the Symposium of VLSI Technology , pp. 169-170
    • Frank, D.J.1
  • 14
    • 0024870515 scopus 로고
    • Spread source/drain (SSD) MOSFET using selective silicon growth for 64 Mbit DRAMs
    • T. Yamada et al, "Spread source/drain (SSD) MOSFET using selective silicon growth for 64 Mbit DRAMs" Technical Digest of the International Electron Devices Meeting, 1989, Page(s): 35-38.
    • (1989) Technical Digest of the International Electron Devices Meeting , pp. 35-38
    • Yamada, T.1
  • 15
    • 27944462684 scopus 로고    scopus 로고
    • Integration of high-k dielectrics into sub-65 nm CMOS technology-requirements and challenges
    • D. Misra et al, "Integration of high-k dielectrics into sub-65 nm CMOS technology-requirements and challenges". Proceedings of the 2004 IEEE Region 10 Conference TENCON 2004, Vol 4, November 2004, Page(s): 320-323.
    • (2004) Proceedings of the 2004 IEEE Region 10 Conference TENCON 2004 , vol.4 , pp. 320-323
    • Misra, D.1
  • 16
    • 84888227570 scopus 로고    scopus 로고
    • Laser scanning apparatus and methods for thermal processing
    • US Patent 20040084427
    • S. Talwar et al, "Laser scanning apparatus and methods for thermal processing" US Patent 20040084427.
    • Talwar, S.1
  • 17
    • 84888213666 scopus 로고    scopus 로고
    • B. Rajendran, Ph.D Dissertation, Stanford University, August 2006
    • B. Rajendran, Ph.D Dissertation, Stanford University, August 2006.
  • 18
    • 0034297242 scopus 로고    scopus 로고
    • Differential thermal budget in laser processing: Application to formation of titanium suicide
    • October
    • G. Verma et al, "Differential thermal budget in laser processing: application to formation of titanium suicide" IEEE Electron Device Letters, Volume: 21, Issue: 10, October 2000, Page(s): 482-484.
    • (2000) IEEE Electron Device Letters , vol.21 , Issue.10 , pp. 482-484
    • Verma, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.