CMOS transistor processing compatible with monolithic 3-D integration

2005 Proceedings - 22nd International VLSI Multilevel Interconnection Conference, VMIC 2005

Volumn , Issue , 2005, Pages 76-82

  Rajendran, B ^a   Shenoy, R S ^b   Witte, D J ^a   Chokshi, N S ^c   DeLeon, R L ^c   Tompa, G S ^c   Pease, R F W ^a  

^a Stanford University   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c AMBP Tech Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TRANSISTORS; DEPOSITION PROCESS; DOPANT ACTIVATION; ELECTRICAL ACTIVATION; HEATING MATERIALS; HIGH TEMPERATURE; LOW-TEMPERATURE OXIDES; THREE-DIMENSIONAL (3D) INTEGRATED CIRCUITS;

ANNEALING; CHEMICAL ACTIVATION; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); THREE DIMENSIONAL;

TRANSISTORS;

EID: 33947376744     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. J.A Davis, et al., "Interconnect Limits on Gigascale Integration (GSI) in the 21st century" Proc IEEE 89, 305 (2001)
2. B Rajendran et al, "Electrical Integrity of MOS devices in Laser Annealed 3D IC structures.", VMIC 2004.
3. Stanford University Integrated Circuit Fabrication Laboratory Website. Available Online: http://www.stanford.edu/class/ee410
4. R.C. Weast, Handbook of Chemistry and Physics, 70th edition, CRC press, 1989-1990
5. Y. S. Touloukian, Thermophysical properties of matter, TPRC Data Series Vol. 1-4.
6. K. Yamamoto et al,. "Thermal Diffusivity of Crystalline and Liquid Silicon and an Anomaly at Melting" Jpn. J. Appl. Phys. Vol. 30, No. 10, 15 October 1991
7. E. D. Palik, Handbook of optical constants of solids, Academic Press, 1985-1998.
8. n, k Database. Available online: http://www.ioffe.ru/SVA/NSM/nk/index. html
9. C. K. Ong et al, "Heat-flow calculation of pulsed excimer ultraviolet laser's melting of amorphous and crystalline silicon surfaces", J. Opt. Soc. Am. B/Vol. 3, No. 5/May 1986.