Temperature dependence of the piezotronic effect in ZnO nanowires

Nano Letters

Volumn 13, Issue 11, 2013, Pages 5026-5032

  Hu, Youfan ^a   Klein, Benjamin D B ^b   Su, Yuanjie ^a   Niu, Simiao ^a   Liu, Ying ^a   Wang, Zhong Lin ^a,c  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

nanowire; piezotronic effect; ZnO

Indexed keywords

FUNDAMENTAL MECHANISMS; LOW CARRIER DENSITY; N-TYPE SEMICONDUCTORS; PIEZOELECTRIC POLARIZATIONS; PIEZOTRONIC EFFECT; SCHOTTKY BARRIER HEIGHTS; TEMPERATURE DEPENDENCE; ZNO;

SEMICONDUCTOR DOPING; TEMPERATURE DISTRIBUTION; TRANSPORT PROPERTIES; ZINC OXIDE;

NANOWIRES;

EID: 84887838532     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl401702g     Document Type: Article

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