Improved electrical properties of Nd-doped K0.5Bi 4.5Ti4O15 thin films prepared by chemical solution deposition

Ceramics International

Volumn 40, Issue 1 PART A, 2014, Pages 1111-1116

  Kim, J W ^a   Do, D ^b   Raghavan, C M ^a   Kim, S S ^a  

^a Changwon National University   (South Korea)

^b Keimyung University   (South Korea)

Author keywords

A. Films; B. X ray methods; C. Electrical properties; C. Ferroelectric properties

Indexed keywords

BISMUTH COMPOUNDS; BORON COMPOUNDS; DEPOSITION; FERROELECTRIC FILMS; FERROELECTRICITY; FILM PREPARATION; NEODYMIUM COMPOUNDS; PEROVSKITE; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION;

CHEMICAL SOLUTION DEPOSITION; CRYSTALLINE STRUCTURE; FERROELECTRIC PROPERTY; LAYERED PEROVSKITE STRUCTURE; POLARIZATION FATIGUE; RAMAN SCATTERING SPECTRA; REMNANT POLARIZATIONS; X RAY METHODS;

POTASSIUM COMPOUNDS;

EID: 84887622022     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2013.06.111     Document Type: Article

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