Effect of Nd and Nd/Nb doping on dielectric, ferroelectric and electrical properties of Bi4Ti3O12 ceramics

Journal of the Korean Physical Society

Volumn 54, Issue 2 PART 1, 2009, Pages 906-910

  Kim, Jin Soo ^a   Kim, Yu Sung ^a   Choi, Byung Chun ^a   Jeong, Jung Hyun ^a   Chung, Su Tae ^a   Cho, Sang Bock ^b  

^a Pukyong National University   (South Korea)

^b University of Ulsan   (South Korea)

Author keywords

Bismuth layered perovskite; BIT; BLT; Conductivity; Dielectric dispersion; Ferroelectric; Ferroelectric P E hysteresis loop; FRAM; Oxygen vacancy

Indexed keywords

EID: 62149131789     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.54.906     Document Type: Conference Paper

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