High performance and stable N-channel organic field-effect transistors by patterned solvent-vapor annealing

ACS Applied Materials and Interfaces

Volumn 5, Issue 21, 2013, Pages 10745-10752

  Khim, Dongyoon ^b   Baeg, Kang Jun ^c   Kim, Juhwan ^b   Kang, Minji ^b   Lee, Seung Hoon ^b   Chen, Zhihua ^d   Facchetti, Antonio ^d   Kim, Dong Yu ^b   Noh, Yong Young ^a  

^a Dongguk University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Korea Electrotechnology Research Institute (KERI)   (South Korea)

^d POLYERA CORPORATION   (United States)

Author keywords

bias stress; conjugated molecules; molecular orientation; organic field effect transistors; patterned crystallinity; solvent vapor annealing

Indexed keywords

1 ,2-DICHLOROETHANES; BIAS STRESS; CHARGE-CARRIER MOBILITY; CONJUGATED MOLECULES; CRYSTALLINITIES; ORGANIC FIELD-EFFECT TRANSISTOR (OFETS); SEMICONDUCTOR THIN FILMS; SOLVENT-VAPOR ANNEALING;

ANNEALING; MOLECULAR ORIENTATION; MOLECULES; ORGANIC FIELD EFFECT TRANSISTORS; ORGANIC POLYMERS; SOLVENTS; THIN FILMS;

VAPORS;

EID: 84887597319     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am4029075     Document Type: Article

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