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Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

(5) Wang, Liang a,c Adesida, Ilesanmi a Dabiran, Amir M b Wowchak, Andrew M b Chow, Peter P b

a University of Illinois at Urbana Champaign (United States)

b SVT ASSOCIATES (United States)

c TEXAS INSTRUMENTS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMERICAN INSTITUTE OF PHYSICS (AIP); AS-DEPOSITED; CARRIER (CO); HETEROSTRUCTURES; HIGH-ELECTRON-MOBILITY (HEM); MICROSTRUCTURAL CHARACTERIZATIONS; PLASMA TREATMENTS; THREADING DISLOCATIONS (TD); TUNNELING CURRENTS;

CARRIER TRANSPORT; ELECTRIC CONTACTORS; ELECTRON MOBILITY; HEALTH; METALS; OHMIC CONTACTS; PLASMA APPLICATIONS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 48249104779 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2964204 Document Type: Article

Times cited : (26)

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