InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting

Optics Express

Volumn 21, Issue 106, 2013, Pages A991-A996

  Liu, Shu Yen ^a   Sheu, J K ^a   Lin, Yu Chuan ^a   Chen, Yu Tong ^a   Tu, S J ^a   Lee, M L ^b   Lai, W C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GALLIUM ARSENIDE; HYBRID SYSTEMS; HYDROGEN PRODUCTION; OHMIC CONTACTS; SEMICONDUCTING GALLIUM;

DRIVING FORCES; GAAS SOLAR CELLS; HYDROGEN GENERATIONS; LIGHT INTENSITY; MAXIMUM POWER POINT; OPERATING POINTS; WATER SPLITTING; WORKING ELECTRODE;

SOLAR CELLS;

EID: 84887447042     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.00A991     Document Type: Article

References (17)

1. A. Fujishima and K. Honda, “Electrochemical photolysis of water at a semiconductor electrode,” Nature 238(5358), 37-38 (1972).
2. W. J. Youngblood, S. H. A. Lee, Y. Kobayashi, E. A. Hernandez-Pagan, P. G. Hoertz, T. A. Moore, A. L. Moore, D. Gust, and T. E. Mallouk, “Photoassisted overall water splitting in a visible light-absorbing dye-sensitized photoelectrochemical cell,” J. Am. Chem. Soc. 131(3), 926-927 (2009).
3. Z. Yi, J. Ye, N. Kikugawa, T. Kako, S. Ouyang, H. Stuart-Williams, H. Yang, J. Cao, W. Luo, Z. Li, Y. Liu, and R. L. Withers, “An orthophosphate semiconductor with photooxidation properties under visible-light irradiation,” Nat. Mater. 9(7), 559-564 (2010).
4. I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN,” Appl. Phys. Lett. 91(9), 093519 (2007).
5. J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett. 93(16), 162107 (2008).
6. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in I^-Ga^N alloys,” Appl. Phys. Lett. 80(25), 4741 (2002).
7. K. Fujii, M. Ono, T. Ito, Y. Iwaki, A. Hirako, and K. Ohkawa, “Band-edge energies and photoelectrochemical properties of n-Type Al^Ga^N and I^Ga^N alloys,” J. Electrochem. Soc. 154(2), B175-B179 (2007).
8. W. Luo, B. Liu, Z. Li, Z. Xie, D. Chen, Z. Zou, and R. Zhang, “Stable response to visible light of InGaN photoelectrodes,” Appl. Phys. Lett. 92(26), 262110 (2008).
9. K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Hydrogen generation by solar water splitting using pInGaN photoelectrochemical cells,” Appl. Phys. Lett. 96(5), 052110 (2010).
10. M. Li, W. Luo, B. Liu, X. Zhao, Z. Li, D. Chen, T. Yu, Z. Xie, R. Zhang, and Z. Zou, “Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment,” Appl. Phys. Lett. 99(11), 112108 (2011).
11. O. Khaselev and J. A. Turner, “A monolithic photovoltaic-photoelectrochemical device for hydrogen production via water splitting,” Science 280(5362), 425-427 (1998).
12. A. Currao, “Photoelectrochemical water splitting,” Chimia (Aarau) 61(12), 815-819 (2007).
13. A. Siegel and T. Schott, “Optimization of photovoltaic hydrogen production,” Int. J. Hydrogen Energy 13(11), 659-675 (1988).
14. M. L. Lee, J. K. Sheu, and C. C. Hu, “Non-alloyed Cr/Au Ohmic contacts to n-GaN,” Appl. Phys. Lett. 91(18), 182106 (2007).
15. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “The indium tin oxide Ohmic contact to highly doped n-GaN,” Solid-State Electron. 43(11), 2081-2084 (1999).
16. S. Y. Liu, Y. C. Lin, J. C. Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai, and J. K. Sheu, “Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts,” Opt. Express 19(S6 Suppl 6), A1196-A1201 (2011).
17. S. Y. Liu, J. K. Sheu, M. L. Lee, Y. C. Lin, S. J. Tu, F. W. Huang, and W. C. Lai, “Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation,” Opt. Express 20(S2 Suppl 2), A190-A196 (2012).