Hydrogen gas generation using n-GaN photoelectrodes with immersed indium tin oxide ohmic contacts

Optics Express

Volumn 19, Issue 106, 2011, Pages A1196-A1201

  Liu, Shu Yen ^a   Lin, Yu Chuan ^a   Ye, Jhao Cheng ^a   Tu, S J ^a   Huang, F W ^a   Lee, M L ^b   Lai, W C ^a   Sheu, J K ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTORS; ELECTRODES; GALLIUM NITRIDE; GAS GENERATORS; HYDROGEN; HYDROGEN PRODUCTION; INDIUM; INDIUM COMPOUNDS; MULTIPHOTON PROCESSES; OHMIC CONTACTS; SILICA; SODIUM CHLORIDE; TIN; TIN OXIDES; CELLS;

GAN LAYERS; GAS GENERATION; HYDROGEN GAS GENERATION; HYDROGEN GENERATIONS; INDIUM TIN OXIDE; ITO CONTACT; PHOTO-ELECTRODES; PHOTOCURRENT DENSITY; PHOTOELECTROCHEMICALS; WORKING ELECTRODE;

DENSITY OF GASES;

EID: 80755181045     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.0A1196     Document Type: Article

References (18)

1. N. S. Lewis, “Light work with water, ” Nature 414(6864), 589-590 (2001).
2. A. Fujishima and K. Honda, “Electrochemical photolysis of water at a semiconductor electrode, ” Nature 238(5358), 37-38 (1972).
3. A. J. Nozik, “Electrode materials for photoelectrochemical devices, ” J. Cryst. Growth 39(1), 200-209 (1977).
4. R. C. Kainthla and B. Zelenay, “Significant efficiency increase in self-driven photoelectrochemical cell for water photoelectrolysis, ” J. Electrochem. Soc. 134(4), 841 (1987).
5. A. J. Nozik and R. Memming, “Physical chemistry of semiconductor-liquid interfaces, ” J. Phys. Chem. 100(31), 13061-13078 (1996).
6. I. Waki, D. Cohen, R. Lal, U. Mishra, S. P. DenBaars, and S. Nakamura, “Direct water photoelectrolysis with patterned n-GaN, ” Appl. Phys. Lett. 91(9), 093519 (2007).
7. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In GaN alloys, ” Appl. Phys. Lett. 80(25), 4741 (2002).
8. K. Fujii, T. Karasawa, and K. Ohkawa, “Hydrogen gas generation by splitting aqueous water using n-type GaN photoelectrode with anodic oxidation, ” Jpn. J. Appl. Phys. 44(18), 543-545 (2005).
9. J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes, ” Appl. Phys. Lett. 93(16), 162107 (2008).
10. 2generation at zero bias optimized by carrier concentration of n-type GaN, ” J. Chem. Phys. 126(5), 054708 (2007).
11. 2 Protection layer on the ohmic contacts from the electrolyte, ” J. Electrochem. Soc. 157(2), B266-B268 (2010).
12. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, “Indium tin oxide ohmic contact to highly doped n-GaN, ” Solid-State Electron. 43(11), 2081-2084 (1999).
13. T. Margalith, O. Buchinsky, D. A. Cohen, A. C. Abare, M. Hansen, S. P. DenBaars, and L. A. Coldren, “Indium tin oxide contacts to gallium nitride optoelectronic devices, ” Appl. Phys. Lett. 74(26), 3930 (1999).
14. J. Stotter, Y. Show, S. Wang, and G. Swain, “Comparison of the Electrical, Optical, and Electrochemical Properties of Diamond and Indium Tin Oxide Thin-Film Electrodes, ” Chem. Mater. 17(19), 4880-4888 (2005).
15. K. Fujii, H. Nakayama, K. Sato, T. Kato, M. W. Cho, and T. Yao, “Improvement of hydrogen generation efficiency using GaN photoelectrochemical reaction in electrolytes with alcohol, ” Phys. Stat. Solidi C 5(6), 2333-2335 (2008).
16. J. E. A. M. van den Meerakker, E. A. Meulenkamp, and M. Scholten, “(Photo)electrochemical characterization of tin-doped indium oxide, ” J. Appl. Phys. 74(5), 3282 (1993).
17. C. G. Zosik, Handbook of Electrochemistry, 1st ed. (Elsevier, 2007) p. 342.
18. C. A. Huang, K. C. Li, G. C. Tu, and W. S. Wang, “The electrochemical behavior of tin-doped indium oxide during reduction in 0.3 M hydrochloric acid, ” Electrochim. Acta 48(24), 3599-3605 (2003).