Photoluminescence studies in CuInS2 thin films grown by sulfurization using ditertiarybutylsulfide

Journal of Applied Physics

Volumn 112, Issue 12, 2012, Pages

  Liu, X H ^a,b,c   Dou, X M ^a,c,d   Sugiyama, M ^b,c  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c UNIVERSITY OF SHANGHAI FOR SCIENCE AND TECHNOLOGY   (China)

^d WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COPPER; COPPER COMPOUNDS; INDIUM; INDIUM COMPOUNDS; IONIZATION POTENTIAL; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SULFUR;

BAND DIAGRAMS; CUINS2 THIN FILMS; DEFECT LEVELS; DONOR-ACCEPTOR PAIR TRANSITIONS; EXCITATION INTENSITY; INDIUM ATOMS; PEAK EMISSIONS; SULFUR VACANCIES;

THIN FILMS;

EID: 84886834339     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4771928     Document Type: Article

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