Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 photo-absorbers by selenization of metal precursors

Journal of Crystal Growth

Volumn 243, Issue 3-4, 2002, Pages 404-409

  Chichibu, Shigefusa F ^a,b   Sugiyama, Mutsumi ^a,b   Ohbasami, Masahiro ^b   Hayakawa, Akinori ^b   Mizutani, Tsutomu ^b   Nakanishi, Hisayuki ^b   Negami, Takayuki ^c   Wada, Takahiro ^d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c PANASONIC CORPORATION   (Japan)

^d RYUKOKU UNIVERSITY   (Japan)

Author keywords

A3. Physical vapor deposition processes; A3. Polycrystalline deposition; Al. Crystal structure; B2. Semiconducting ternary compounds; B3. Solar cells

Indexed keywords

CRYSTAL STRUCTURE; EXCITONS; LIGHT ABSORPTION; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SELENIUM; SOLAR CELLS;

METAL PRECURSORS; SELENIZATION;

COPPER COMPOUNDS;

EID: 0036724770     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01558-0     Document Type: Article

References (24)