First-principles investigations of electronic and mechanical properties for stable Ge2Sb2Te5 with van der Waals corrections

Computational Materials Science

Volumn 82, Issue , 2014, Pages 66-69

  Sa, Baisheng ^a,b   Zhou, Jian ^b,c   Ahuja, Rajeev ^a,d   Sun, Zhimei ^b,c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b XIAMEN UNIVERSITY   (China)

^c BEIHANG UNIVERSITY   (China)

^d UPPSALA UNIVERSITY   (Sweden)

Author keywords

Ge2Sb2Te5; Hybrid functions; Phase change materials; Van der Waals type bonding

Indexed keywords

AB INITIO CALCULATIONS; EXPERIMENTAL VALUES; FIRST-PRINCIPLES INVESTIGATIONS; HYBRID FUNCTIONS; TOPOLOGICAL INSULATORS; VAN DER WAALS CORRECTION;

CALCULATIONS; ELECTRONIC STRUCTURE; HYBRID MATERIALS; MECHANICAL PROPERTIES; PHASE CHANGE MATERIALS; VAN DER WAALS FORCES;

GERMANIUM;

EID: 84886256313     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2013.09.026     Document Type: Article

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