The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

Applied Physics Letters

Volumn 103, Issue 14, 2013, Pages

  Oliver, R A ^a   Massabuau, F C P ^a   Kappers, M J ^a   Phillips, W A ^a   Thrush, E J ^a   Tartan, C C ^a   Blenkhorn, W E ^b   Badcock, T J ^b   Dawson, P ^b   Hopkins, M A ^c   Allsopp, D W E ^c   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; EFFICIENCY; ELECTROLUMINESCENCE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; LIGHT; LIGHT EMITTING DIODES; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

GAN-BASED LIGHT-EMITTING DIODES; HIGH CURRENTS; HIGH TEMPERATURE; HIGHER EFFICIENCY; INGAN/GAN QUANTUM WELL; NON-RADIATIVE RECOMBINATIONS; TEMPERATURE DEPENDENT; WELL WIDTH;

QUANTUM EFFICIENCY;

EID: 84885667384     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824193     Document Type: Article

References (12)

1. S. M. Olaizola, S. T. Pendlebury, J. P. ONeill, D. J. Mowbray, A. G. Cullis, M. S. Skolnick, P. J. Parbrook, and A. M. Fox, J. Phys. D: Appl. Phys. 35, 599 (2002). 10.1088/0022-3727/35/7/305
2. N. K. van der Laak, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, Appl. Phys. Lett. 90, 121911 (2007). 10.1063/1.2715166
3. S. T. Pendlebury, P. J. Parbrook, D. J. Mowbray, D. A. Wood, and K. B. Lee, J. Cryst. Growth 307, 363 (2007). 10.1016/j.jcrysgro.2007.07.018
4. Y. Wang, X. J. Pei, Z. G. Xing, L. W. Guo, H. Q. Jia, H. Chen, and J. M. Zhou, J. Appl. Phys. 101, 033509 (2007). 10.1063/1.2433700
5. S. Kret, F. Ivaldi, K. Sobczak, R. Czernecki, and M. Leszczynski, Phys. Status Solidi A 207, 1101 (2010). 10.1002/pssa.200983116
6. R. Datta, M. J. Kappers, M. E. Vickers, J. S. Barnard, and C. J. Humphreys, Superlattices Microstruct. 36, 393 (2004). 10.1016/j.spmi.2004.09.003
7. M. E. Vickers, M. J. Kappers, T. M. Smeeton, E. J. Thrush, J. S. Barnard, and C. J. Humphreys, J. Appl. Phys. 94, 1565 (2003). 10.1063/1.1587251
8. S. Hammersley, D. Watson-Parris, P. Dawson, M. J. Godfrey, T. J. Badcock, M. J. Kappers, C. McAleese, R. A. Oliver, and C. J. Humphreys, J. Appl. Phys. 111, 083512 (2012). 10.1063/1.3703062
9. W. A. Phillips, E. J. Thrush, Y. Zhang, and C. J. Humphreys, Phys. Status Solidi C 9, 765 (2012). 10.1002/pssc.201100458
10. D. M. Graham, P. Dawson, M. J. Godfrey, M. J. Kappers, P. M. F. J. Costa, M. E. Vickers, R. Datta, C. J. Humphreys, and E. J. Thrush, Phys. Status Solidi C 3, 1970 (2006). 10.1002/pssc.200565252
11. E. Matioli and C. Weissbluth, J. Appl. Phys. 109, 073114 (2011). 10.1063/1.3549730
12. J. Piprek, Phys. Status Solidi A 207, 2217 (2010). 10.1002/pssa.201026149